Datasheet > IXGA48N60B3-TRL

IXGA48N60B3-TRL

更新时间： 2024-09-15 19:42:31

品牌	Logo	应用领域
IXYS		栅
页数	文件大小	规格书
6页	223K
描述
Insulated Gate Bipolar Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXGA48N60B3-TRL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.62
Base Number Matches：	1

IXGA48N60B3-TRL 数据手册

GenX3^TM600V IGBT

IXGA48N60B3

IXGP48N60B3

IXGH48N60B3

V_CES= 600V

I_C110= 48A

V_CE(sat)≤ 1.8V

Medium speed low Vsat PT

IGBTs 5-40 kHz switching

TO-263 (IXGA)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

600

(TAB)

T_J= 25°C to 150°C, R_GE= 1MΩ

TO-220 (IXGP)

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C110

I_CM

T_C= 110°C

(TAB)

T_C= 25°C, 1ms

280

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 120

TO-247 (IXGH)

(RBSOA)

Clamped inductive load @ ≤ 600V

P_C

T_C= 25°C

300

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

(TAB)

T_L

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

T_SOLD

G = Gate

= Collector

E = Emitter

TAB = Collector

M_d

Mounting torque (TO-247)(TO-220)

1.13/10

Nm/lb.in.

Features

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

^zOptimized for low conduction and

switching losses

^zSquare RBSOA

^zInternational standard packages

Advantages

Symbol Test Conditions

(T_J= 25°C unless otherwise specified)

Characteristic Values

^zHigh power density

^zLow gate drive requirement

Min.

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

600

3.0

Applications

5.0

^zPower Inverters

^zUPS

^zMotor Drives

^zSMPS

I_CES

V_CE= V_CES

V_GE= 0V

25 μA

250 μA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

V_CE(sat)

I_C= 32A, V_GE= 15V, Note 1

1.8

DS99938A(05/08)

12 3 4 5 6

中文翻译

下载PDF

与IXGA48N60B3-TRL相关器件

型号	品牌	获取价格	描述	数据表
IXGA48N60C3	IXYS	获取价格	GenX3 600V IGBT
IXGA48N60C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGA4N100	IXYS	获取价格	ADVANCED TECHNICAL INFORMATION
IXGA50N60B4	IXYS	获取价格	High-Gain IGBTs
IXGA50N60C4	IXYS	获取价格	High-Gain IGBTs
IXGA7N60B	IXYS	获取价格	HiPerFAST IGBT
IXGA7N60B	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGA7N60BD1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGA7N60C	IXYS	获取价格	HiPerFAST IGBT Lightspeed Series
IXGA7N60CD1	IXYS	获取价格	HiPerFAST IGBT with Diode Lightspeed Series