Datasheet > IXGA48N60B3-TRL

IXGA48N60B3-TRL

更新时间： 2024-11-18 19:42:31

品牌	Logo	应用领域
IXYS		栅
页数	文件大小	规格书
6页	223K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXGA48N60B3-TRL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.62
Base Number Matches：	1

IXGA48N60B3-TRL 数据手册

GenX3^TM600V IGBT

IXGA48N60B3

IXGP48N60B3

IXGH48N60B3

V_CES= 600V

I_C110= 48A

V_CE(sat)≤ 1.8V

Medium speed low Vsat PT

IGBTs 5-40 kHz switching

TO-263 (IXGA)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

600

(TAB)

T_J= 25°C to 150°C, R_GE= 1MΩ

TO-220 (IXGP)

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C110

I_CM

T_C= 110°C

(TAB)

T_C= 25°C, 1ms

280

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 120

TO-247 (IXGH)

(RBSOA)

Clamped inductive load @ ≤ 600V

P_C

T_C= 25°C

300

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

(TAB)

T_L

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

T_SOLD

G = Gate

= Collector

E = Emitter

TAB = Collector

M_d

Mounting torque (TO-247)(TO-220)

1.13/10

Nm/lb.in.

Features

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

^zOptimized for low conduction and

switching losses

^zSquare RBSOA

^zInternational standard packages

Advantages

Symbol Test Conditions

(T_J= 25°C unless otherwise specified)

Characteristic Values

^zHigh power density

^zLow gate drive requirement

Min.

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

600

3.0

Applications

5.0

^zPower Inverters

^zUPS

^zMotor Drives

^zSMPS

I_CES

V_CE= V_CES

V_GE= 0V

25 μA

250 μA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

V_CE(sat)

I_C= 32A, V_GE= 15V, Note 1

1.8

DS99938A(05/08)

12 3 4 5 6

中文翻译

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