是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DIE |
包装说明: | DIE-2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
集电极-发射极最大电压: | 1000 V | 配置: | SINGLE |
JESD-30 代码: | R-XUUC-N2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGD15N120B-4U | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 | |
IXGD160N30PC-66 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 160A I(C), 300V V(BR)CES, N-Channel, DIE-3 | |
IXGD200N60B-9X | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-9 | |
IXGD20N100-4U | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-2 | |
IXGD28N90B-5X | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 900V V(BR)CES, N-Channel, DIE-2 | |
IXGD2N100-1M | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-2 | |
IXGD35N120B-7U | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-7 | |
IXGD45N120-7U | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-7 | |
IXGD4N100-1T | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-2 | |
IXGD60N60-7Y | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-6 |