是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | TO-263AA, 3 PIN |
针数: | 4 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 90 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 门极发射器阈值电压最大值: | 6.5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-263AA |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 306 ns | 标称接通时间 (ton): | 75 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGA7N60B | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGA7N60B | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGA7N60BD1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGA7N60C | IXYS |
获取价格 |
HiPerFAST IGBT Lightspeed Series | |
IXGA7N60CD1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode Lightspeed Series | |
IXGA8N100 | IXYS |
获取价格 |
IXGA8N100 | |
IXGA9289 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 120A I(C), 300V V(BR)CES, N-Channel, TO-263AA, TO-263AA | |
IXGB16N60R2 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP | |
IXGB16N60U3 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP | |
IXGB200N60B3 | IXYS |
获取价格 |
GenX3 600V IGBT |