是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | UNCASED CHIP, R-XUUC-N7 | Reach Compliance Code: | compliant |
风险等级: | 5.73 | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE | JESD-30 代码: | R-XUUC-N7 |
元件数量: | 1 | 端子数量: | 7 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGD4N100-1T | IXYS |
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Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-2 |
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IXGD60N60-7Y | IXYS |
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Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-6 |
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IXGE200N60B | IXYS |
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HiPerFAST IGBT |
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IXGE200N60B_04 | IXYS |
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HiPerFAST IGBT |
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IXGE50N100Z | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, |
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IXGE50N50Z | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 50A I(C), 500V V(BR)CES |
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IXGE50N60Z | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES |
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IXGE50N80Z | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 50A I(C), 800V V(BR)CES |
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IXGE50N90Z | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 50A I(C), 900V V(BR)CES, |
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IXGE75N100Z | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES, |
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