是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | ISOPLUS |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.67 |
其他特性: | UL RECOGNIZED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 28 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 280 ns |
标称接通时间 (ton): | 43 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGC24N60C | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, ISOPLUS220, 3 PIN | |
IXGD12N60B-3X | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2 | |
IXGD15N100C-4U | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-2 | |
IXGD15N120B-4U | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 | |
IXGD160N30PC-66 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 160A I(C), 300V V(BR)CES, N-Channel, DIE-3 | |
IXGD200N60B-9X | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-9 | |
IXGD20N100-4U | IXYS |
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Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-2 | |
IXGD28N90B-5X | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 900V V(BR)CES, N-Channel, DIE-2 | |
IXGD2N100-1M | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel, DIE-2 | |
IXGD35N120B-7U | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-7 |