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IXGE50N90Z PDF预览

IXGE50N90Z

更新时间: 2024-11-21 20:24:47
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
6页 524K
描述
Insulated Gate Bipolar Transistor, 50A I(C), 900V V(BR)CES,

IXGE50N90Z 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.73
Is Samacsys:N最大集电极电流 (IC):50 A
集电极-发射极最大电压:900 V元件数量:1
最大功率耗散 (Abs):200 W子类别:Insulated Gate BIP Transistors
VCEsat-Max:3.5 VBase Number Matches:1

IXGE50N90Z 数据手册

 浏览型号IXGE50N90Z的Datasheet PDF文件第2页浏览型号IXGE50N90Z的Datasheet PDF文件第3页浏览型号IXGE50N90Z的Datasheet PDF文件第4页浏览型号IXGE50N90Z的Datasheet PDF文件第5页浏览型号IXGE50N90Z的Datasheet PDF文件第6页 

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