Datasheet > IXGH10N170

IXGH10N170

更新时间： 2024-11-06 14:56:31

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	216K
描述
功能与特色: 应用:?

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGH10N170 数据手册

V_CES= 1700V

I_C90= 10A

V_CE(sat)≤ 4.0V

High Voltage

IGBT

IXGH10N170

IXGT10N170

TO-247 (IXGH)

Symbol

V_CES

Test Conditions

Maximum Ratings

T_C= 25°C to 150°C

1700

C (TAB)

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-268 (IXGT)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

C (TAB)

T_C= 25°C, 1ms

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 16Ω

Clamped inductive load

I_CM= 20

G = Gate

E = Emitter

= Collector

(RBSOA)

@ 0.8 • V_CES

TAB = Collector

P_C

T_C= 25°C

110

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

^zInternational standard packages

JEDEC TO-268 and

-55 ... +150

JEDEC TO-247 AD

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

^zHigh current handling capability

^zMOS Gate turn-on

M_d

Mounting torque (TO-247)

1.13/10

Nm/lb.in.

- drive simplicity

^zRugged NPT structure

^zMolding epoxies meet UL94V-0

flammability classification

Weight

TO-247

TO-268

Applications

^zCapacitor discharge & pulser circuits

^zAC motor speed control

Symbol Test Conditions

(T_J= 25°C unless otherwise specified)

Characteristic Values

^zDC servo and robot drives

^zDC choppers

Min. Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

1700

3.0

^zUninterruptible power supplies (UPS)

^zSwitched-mode and resonant-mode

power supplies

5.0

V_CE= 0.8 • V_CES

V_GE= 0V

50 μA

500 μA

T_J= 125°C

Advantages

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^zHigh power density

^zSuitable for surface mounting

^zEasy to mount with 1 screw,

(isolated mounting screw hole)

V_CE(sat)

I_C= I_C90, V_GE= 15V, Note 1

2.7

3.4

4.0

DS98992A(10/08)

12 3 4 5 6

中文翻译

下载PDF

与IXGH10N170相关器件

型号	品牌	获取价格	描述	数据表
IXGH10N170A	IXYS	获取价格	High Voltage IGBT
IXGH10N170A	LITTELFUSE	获取价格	功能与特色: 应用:?
IXGH10N300	LITTELFUSE	获取价格	NPT IGBT拥有方形RBSOA和10 us的短路耐受能力。具有正温度系数Vce(sa
IXGH10N50U1	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 10A I(C) \| TO-247
IXGH10N60	IXYS	获取价格	Low VCE(sat) IGBT, High speed IGBT
IXGH10N60A	IXYS	获取价格	Low VCE(sat) IGBT, High speed IGBT
IXGH10N60AU1	IXYS	获取价格	Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
IXGH10N60U1	IXYS	获取价格	Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
IXGH120N30B3	IXYS	获取价格	GenX3 300V IGBT
IXGH120N30B3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30