Datasheet > IXGF32N170

IXGF32N170

更新时间： 2024-11-06 11:14:07

品牌	Logo	应用领域
IXYS		晶体晶体管功率控制双极性晶体管高压栅
页数	文件大小	规格书
5页	179K
描述
High Voltage IGBT

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中文翻译

获取价格

数据手册

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IXGF32N170 数据手册

V_CES= 1700V

I_C110= 19A

V_CE(sat)≤ 3.5V

t_fi(typ)= 250ns

High Voltage IGBT

IXGF32N170

( Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1700

V_GES

V_GEM

Continuous

Transient

± 20

± 30

ISOLATED TAB

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

200

1 = Gate

2 = Emitter

5 = Collector

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 2.7Ω

I_CM= 70

(RBSOA)

Clamped Inductive Load

@ 0.8 • V_CES

t_sc

T_C= 125°C, V_CE= 1200V, V_GE= 15V, R_G= 10Ω

μs

Features

P_C

T_C= 25°C

200

ꢀ

Electrically Isolated Tab

T_J

-55 ... +150

150

°C

ꢀ

High Current Handling Capability

Rugged NPT Structure

T_JM

T_stg

-55 ... +150

Molding Epoxies Meet UL 94 V-0

Flammability Classification

T_L

T_SOLD

1.6 mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

F_C

Mounting Force

20..120 / 4.5..27

Nm/lb.in.

Applications

ꢀ

V_ISOL

Weight

50/60Hz, 1 minute

2500

Capacitor Discharge & Pulser Circuits

AC Motor Drives

Uninterruptible Power Supplies (UPS)

Switched-Mode and Resonant-Mode

ꢀ

Power Supplies

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1700

3.0

Typ.

Max.

Advantages

BV_CES

V_GE(th)

I_CES

I_C= 1mA, V_GE= 0V

ꢀ

High Power Density

Suitable for Surface Mounting

I_C= 250μA, V_CE= V_GE

V_CE= 0.8 • V_CES, V_GE= 0V, Note 2

5.0

ꢀ

50 μA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 32A, V_GE= 15V, Note 1

2.7

3.3

3.5

T_J= 125°C

DS99569B(5/09)

12 3 4 5

中文翻译

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