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IXGD35N120B-7U PDF预览

IXGD35N120B-7U

更新时间: 2024-11-21 20:04:23
品牌 Logo 应用领域
IXYS 晶体管
页数 文件大小 规格书
1页 51K
描述
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-7

IXGD35N120B-7U 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DIE
包装说明:DIE-7针数:7
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.73集电极-发射极最大电压:1200 V
配置:SINGLEJESD-30 代码:R-XUUC-N7
元件数量:1端子数量:7
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IXGD35N120B-7U 数据手册

  
Insulated Gate Bipolar Transistors  
IGBT-Chips  
Type  
VCES  
VCE(sat) @ IC  
Cies  
typ.  
tfi  
typ.  
Chip  
type  
Chip size  
dimensions  
Source  
bond wire  
recommend  
Equivalent  
device  
datasheet  
Dim.  
out-  
line  
No.  
T
JM = 150°C  
V
V
A
pF  
ns  
mm  
mils  
IXGD28N30-43  
IXGD40N30-5X  
300  
2.1  
1.5  
20  
20  
1500  
2500  
120  
220  
IX43  
IX5X  
5.64 x 4.67  
6.58 x 6.58  
222 x 184 15 mil x 1  
259 x 259 15 mil x 2  
IXGH28N30A  
IXGH40N30  
1
26  
IXGD12N60B-3X  
IXGD31N60-4X  
IXGD41N60-5X  
IXGD60N60-7Y  
IXGD200N60B-9X  
600  
2.1  
1.8  
1.4  
1.7  
1.6  
12  
20  
20  
20  
20  
750  
1500  
2500  
3700  
9000  
120  
400  
450  
360  
160  
IX3X  
IX4X  
IX5X  
IX7Y  
IX9X  
4.39 x 3.60  
5.65 x 4.70  
6.59 x 6.59  
8.89 x 7.16  
173 x 142 12 mil x 1  
222 x 185 15 mil x 1  
259 x 259 15 mil x 2  
350 x 282 15 mil x 3  
IXGP12N60B  
IXGH31N60  
IXGH41N60  
IXGH60N60B  
IXGN200N60B  
3
11  
26  
27  
23  
14.20 x 10.60 559 x 417 15 mil x 6  
IXGD2N100-1M  
IXGD4N100-1T  
IXGD8N100-2L  
IXGD12N100-33  
IXGD20N100-4U  
IXGD25N100-5T  
1000  
2.5  
2.7  
2.7  
3.5  
2.7  
3.4  
2
4
8
12  
20  
20  
80  
350  
600  
750  
1750  
2750  
390  
390  
390  
800  
280  
800  
IX1M  
IX1T  
IX2L  
IX33  
IX4U  
IX5T  
1.96 x 1.68  
2.54 x 2.54  
3.17 x 3.17  
4.39 x 3.60  
5.77 x 4.96  
6.73 x 6.61  
77 x 66  
5 mil x 1  
30  
2
31  
3
12  
9
100 x 100 5 mil x 1  
125 x 125 12 mil x 1  
173 x 142 12 mil x 1  
227 x 195 15 mil x 1  
265 x 260 10 mil x 4  
IXGP8N100  
IXGH12N100  
IXGH20N100  
IXGH25N100  
IXGD25N120-5T  
IXGD45N120-7U  
1200  
2.9  
2.2  
20  
20  
2750  
4700  
800  
390  
IX5T  
IX7U  
6.73 x 6.61  
9.51 x 7.21  
265 x 260 10 mil x 4  
375 x 284 15 mil x 3  
IXGH25N120  
IXGH45N120  
9
32  
IXGD28N30A-43  
300  
600  
2.1  
20  
1500  
120  
IX43  
5.64 x 4.67  
222 x 184 15 mil x 1  
IXGH28N30A  
1
IXGD20N60B-4X  
IXGD24N60B-4X  
IXGD28N60B-4X  
IXGD30N60B-5X  
IXGD32N60B-5X  
IXGD40N30A-5X  
IXGD50N60B-7Y  
2.0  
2.5  
1.8  
1.6  
2.3  
1.8  
2.2  
20  
20  
20  
20  
20  
20  
20  
1500  
1500  
1500  
2500  
2500  
2500  
4000  
150  
120  
200  
190  
120  
120  
150  
IX4X  
IX4X  
IX4X  
IX5X  
IX5X  
IX5X  
IX7Y  
5.65 x 4.70  
5.65 x 4.70  
5.65 x 4.70  
6.58 x 6.58  
6.59 x 6.59  
6.58 x 6.58  
8.89 x 7.16  
222 x 185 15mil x 1  
222 x 185 15mil x 1  
222 x 185 15mil x 1  
259 x 259 15 mil x 2  
259 x 259 15 mil x 2  
259 x 259 20 mil x 1  
350 x 282 15 mil x 3  
IXGH20N60B  
IXGH24N60B  
IXGH28N60B  
IXGH30N60B  
IXGH32N60B  
IXGH40N30A  
IXGH50N60B  
11  
11  
11  
26  
26  
26  
27  
IXGD28N90B-5X  
900  
1.8  
20  
2500  
130  
IX5X  
6.59 x 6.59  
259 x 259 15 mil x 2  
IXGH28N90B  
26  
IXGD12N100A-33  
IXGD15N100C-4U  
IXGD25N100A-5T  
1000  
4.0  
3.5  
3.9  
12  
15  
20  
750  
1720  
2750  
500  
100  
500  
IX33  
IX4U  
IX5T  
4.39 x 3.60  
5.77 x 4.96  
6.73 x 6.61  
173 x 142 12 mil x 1  
227 x 195 15 mil x 1  
265 x 260 10 mil x 4  
IXGH12N100A  
IXGH15N100C  
IXGH25N100A  
3
12  
9
IXGD15N120B-4U 1200  
IXGD25N120A-5T  
IXGD35N120B-7U  
3.2  
3.9  
3.2  
15  
20  
20  
1720  
2750  
4200  
160  
600  
160  
IX4U  
IX5T  
IX7U  
5.77 x 4.96  
6.73 x 6.61  
9.51 x 7.21  
227 x 195 15 mil x 1  
265 x 260 10 mil x 4  
375 x 284 15 mil x 3  
IXGP15N120B  
IXGH25N120A  
IXGH35N120B  
12  
9
32  
Notes:  
1 Recommended Gate bond wire is 8 mil except 6 mil wire must be used for starred (*) types.  
2 Maximum switching limits from packaged device data sheet are given in the respective discrete data sheet.  
3 Dice are tested to Vsat limits as indicated up to a maximum of 20A.  
4 Recommended die processing thermal budget is not to exceed 365 degrees C for 5 minutes.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
J - 3  

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