Insulated Gate Bipolar Transistors
IGBT-Chips
Type
VCES
VCE(sat) @ IC
Cies
typ.
tfi
typ.
Chip
type
Chip size
dimensions
Source
bond wire
recommend
Equivalent
device
datasheet
Dim.
out-
line
No.
T
JM = 150°C
V
V
A
pF
ns
mm
mils
IXGD28N30-43
IXGD40N30-5X
300
2.1
1.5
20
20
1500
2500
120
220
IX43
IX5X
5.64 x 4.67
6.58 x 6.58
222 x 184 15 mil x 1
259 x 259 15 mil x 2
IXGH28N30A
IXGH40N30
1
26
IXGD12N60B-3X
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7Y
IXGD200N60B-9X
600
2.1
1.8
1.4
1.7
1.6
12
20
20
20
20
750
1500
2500
3700
9000
120
400
450
360
160
IX3X
IX4X
IX5X
IX7Y
IX9X
4.39 x 3.60
5.65 x 4.70
6.59 x 6.59
8.89 x 7.16
173 x 142 12 mil x 1
222 x 185 15 mil x 1
259 x 259 15 mil x 2
350 x 282 15 mil x 3
IXGP12N60B
IXGH31N60
IXGH41N60
IXGH60N60B
IXGN200N60B
3
11
26
27
23
14.20 x 10.60 559 x 417 15 mil x 6
IXGD2N100-1M
IXGD4N100-1T
IXGD8N100-2L
IXGD12N100-33
IXGD20N100-4U
IXGD25N100-5T
1000
2.5
2.7
2.7
3.5
2.7
3.4
2
4
8
12
20
20
80
350
600
750
1750
2750
390
390
390
800
280
800
IX1M
IX1T
IX2L
IX33
IX4U
IX5T
1.96 x 1.68
2.54 x 2.54
3.17 x 3.17
4.39 x 3.60
5.77 x 4.96
6.73 x 6.61
77 x 66
5 mil x 1
30
2
31
3
12
9
100 x 100 5 mil x 1
125 x 125 12 mil x 1
173 x 142 12 mil x 1
227 x 195 15 mil x 1
265 x 260 10 mil x 4
IXGP8N100
IXGH12N100
IXGH20N100
IXGH25N100
IXGD25N120-5T
IXGD45N120-7U
1200
2.9
2.2
20
20
2750
4700
800
390
IX5T
IX7U
6.73 x 6.61
9.51 x 7.21
265 x 260 10 mil x 4
375 x 284 15 mil x 3
IXGH25N120
IXGH45N120
9
32
IXGD28N30A-43
300
600
2.1
20
1500
120
IX43
5.64 x 4.67
222 x 184 15 mil x 1
IXGH28N30A
1
IXGD20N60B-4X
IXGD24N60B-4X
IXGD28N60B-4X
IXGD30N60B-5X
IXGD32N60B-5X
IXGD40N30A-5X
IXGD50N60B-7Y
2.0
2.5
1.8
1.6
2.3
1.8
2.2
20
20
20
20
20
20
20
1500
1500
1500
2500
2500
2500
4000
150
120
200
190
120
120
150
IX4X
IX4X
IX4X
IX5X
IX5X
IX5X
IX7Y
5.65 x 4.70
5.65 x 4.70
5.65 x 4.70
6.58 x 6.58
6.59 x 6.59
6.58 x 6.58
8.89 x 7.16
222 x 185 15mil x 1
222 x 185 15mil x 1
222 x 185 15mil x 1
259 x 259 15 mil x 2
259 x 259 15 mil x 2
259 x 259 20 mil x 1
350 x 282 15 mil x 3
IXGH20N60B
IXGH24N60B
IXGH28N60B
IXGH30N60B
IXGH32N60B
IXGH40N30A
IXGH50N60B
11
11
11
26
26
26
27
IXGD28N90B-5X
900
1.8
20
2500
130
IX5X
6.59 x 6.59
259 x 259 15 mil x 2
IXGH28N90B
26
IXGD12N100A-33
IXGD15N100C-4U
IXGD25N100A-5T
1000
4.0
3.5
3.9
12
15
20
750
1720
2750
500
100
500
IX33
IX4U
IX5T
4.39 x 3.60
5.77 x 4.96
6.73 x 6.61
173 x 142 12 mil x 1
227 x 195 15 mil x 1
265 x 260 10 mil x 4
IXGH12N100A
IXGH15N100C
IXGH25N100A
3
12
9
IXGD15N120B-4U 1200
IXGD25N120A-5T
IXGD35N120B-7U
3.2
3.9
3.2
15
20
20
1720
2750
4200
160
600
160
IX4U
IX5T
IX7U
5.77 x 4.96
6.73 x 6.61
9.51 x 7.21
227 x 195 15 mil x 1
265 x 260 10 mil x 4
375 x 284 15 mil x 3
IXGP15N120B
IXGH25N120A
IXGH35N120B
12
9
32
Notes:
1 Recommended Gate bond wire is 8 mil except 6 mil wire must be used for starred (*) types.
2 Maximum switching limits from packaged device data sheet are given in the respective discrete data sheet.
3 Dice are tested to Vsat limits as indicated up to a maximum of 20A.
4 Recommended die processing thermal budget is not to exceed 365 degrees C for 5 minutes.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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