型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGB200N60B3 | IXYS |
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GenX3 600V IGBT | |
IXGB200N60B3 | LITTELFUSE |
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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGB25N60R2 | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 25A I(C) | SIP | |
IXGB75N60BD1 | IXYS |
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HiPerFAST IGBT with Diode | |
IXGC12N60C | IXYS |
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Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, ISOPLUS220, 3 PIN | |
IXGC12N60CD1 | IXYS |
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Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, ISOPLUS220, 3 PIN | |
IXGC16N60B2 | IXYS |
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Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS220 | |
IXGC16N60B2D1 | IXYS |
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Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS220 | |
IXGC24N60C | IXYS |
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Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, ISOPLUS220, 3 PIN | |
IXGD12N60B-3X | IXYS |
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Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2 |