是否无铅: | 不含铅 | 生命周期: | Transferred |
零件包装代码: | D2PAK | 包装说明: | D2PAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.72 |
其他特性: | LOW SATURATION VOLTAGE | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 16 A | 集电极-发射极最大电压: | 1000 V |
配置: | SINGLE | 门极发射器阈值电压最大值: | 5.5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 54 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 900 ns |
标称接通时间 (ton): | 15 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGA9289 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 120A I(C), 300V V(BR)CES, N-Channel, TO-263AA, TO-263AA | |
IXGB16N60R2 | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP | |
IXGB16N60U3 | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP | |
IXGB200N60B3 | IXYS |
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GenX3 600V IGBT | |
IXGB200N60B3 | LITTELFUSE |
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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGB25N60R2 | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 25A I(C) | SIP | |
IXGB75N60BD1 | IXYS |
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HiPerFAST IGBT with Diode | |
IXGC12N60C | IXYS |
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Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, ISOPLUS220, 3 PIN | |
IXGC12N60CD1 | IXYS |
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Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, ISOPLUS220, 3 PIN | |
IXGC16N60B2 | IXYS |
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Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS220 |