Datasheet > IXGA12N60CD1

IXGA12N60CD1

更新时间： 2024-10-30 11:14:07

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
2页	74K
描述
HiPerFAST IGBT Lightspeed Series

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中文翻译

获取价格

数据手册
替代型号

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IXGA12N60CD1 数据手册

HiPerFAST^TMIGBT

Lightspeed^TMSeries

IXGA 12N60CD1

IXGP 12N60CD1

V_CES= 600 V

I_C25= 24 A

V_CE(sat)= 2.7 V

= 55 ns

fi(typ)

Symbol

TestConditions

Maximum Ratings

TO-263(IXGA)

V_CES

V_CGR

= 25°C to 150°C

600

= 25°C to 150°C; R = 1 MΩ

C (TAB)

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

= 25°C

= 90°C

TO-220 AB

(IXGP)

= 25°C, 1 ms

SSOA

= 15 V, T = 125°C, R = 33 Ω I = 24

(RBSOA)

Clamped inductive load, L = 300 µH

@ 0.8 V

CES

P_C

= 25°C

100

T_J

-55 ... +150

150

°C

G = Gate

E = Emitter

C = Collector

TAB = Collector

T_JM

T_stg

-55 ... +150

M_d

Mounting torque with screw M3

Mounting torque with screw M3.5

0.45/4 Nm/lb.in.

0.55/5 Nm/lb.in.

Features

Weight

• Very high frequency IGBT

• New generation HDMOS process

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

• Internationalstandardpackage

JEDEC TO-220AB and TO-263AA

• Highpeakcurrenthandlingcapability

Applications

Symbol

TestConditions

Characteristic Values

• PFCcircuit

• AC motor speed control

• DC servo and robot drives

• Switch-modeandresonant-mode

power supplies

(T = 25°C, unless otherwise specified)

min. typ. max.

BV_CES

V_GE(th)

= 250 µA, V = 0 V

600

2.5

= 250 µA, V = V

5.0

• Highpoweraudioamplifiers

I_CES

= 0.8 V

= 0 V

T = 25°C

200 µA

1.5 mA

CES

T = 125°C

Advantages

I_GES

= 0 V, V = ±20 V

±100 nA

• Fastswitchingspeed

• High power density

V_CE(sat)

= I , V = 15 V

2.1

2.7

CE90

98513C (2/02)

中文翻译

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IXGA12N60CD1 替代型号

型号	品牌	替代类型	描述	数据表
IRG4BC30UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT
IXDR30N120D1	IXYS	功能相似	High Voltage IGBT with optional Diode ISOPLUSTM package

与IXGA12N60CD1相关器件

型号	品牌	获取价格	描述	数据表
IXGA14N120B	IXYS	获取价格	IGBT Optimized for switching up to 35 KHz
IXGA150N33TC	IXYS	获取价格	Insulated Gate Bipolar Transistor, 150A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
IXGA15N100B	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 30A I(C), N-Channel, TO-263AB, D2PAK-3
IXGA15N100C	IXYS	获取价格	IGBT Lightspeed Series
IXGA15N120B	IXYS	获取价格	HiPerFAST IGBT
IXGA15N120B2	IXYS	获取价格	Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-263AA, TO-263AA
IXGA15N120C	IXYS	获取价格	HiPerFAST IGBT
IXGA16N60B2	IXYS	获取价格	HiPerFAST IGBTs B2-Class High Speed
IXGA16N60B2D1	IXYS	获取价格	HiPerFAST IGBTs B2-Class High Speed w/ Diode
IXGA16N60C2	IXYS	获取价格	HiPerFASTTM IGBT C2-Class High Speed IGBT