Datasheet > IXGA16N60B2

IXGA16N60B2

更新时间： 2024-09-13 11:14:07

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
6页	222K
描述
HiPerFAST IGBTs B2-Class High Speed

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中文翻译

获取价格

数据手册
替代型号

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IXGA16N60B2 数据手册

HiPerFAST^TMIGBTs

B2-Class High Speed

V_CES= 600V

I_C110= 16A

V_CE(sat)≤ 2.3V

t_fi(typ)= 70ns

IXGA16N60B2

IXGP16N60B2

TO-263 AA (IXGA)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

600

C (Tab)

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-220AB (IXGP)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

100

C (Tab)

SSOA

V_GE= 15V, T_J= 125°C, R_G= 22Ω

I_CM= 32

(RBSOA)

Clamped Inductive load

V_CE≤ V_CES

P_C

T_C= 25°C

150

G = Gate

= Collector

E = Emitter

Tab = Collector

T_J

T_JM

T_stg

-55 ... +150

150

°C

-55 ... +150

Features

M_d

F_C

Mounting Torque (TO-220)

Mounting Force (TO-263)

1.13/10

10..65 / 2.2..14.6

Nm/lb.in.

N/lb.

Optimized for Low Conduction and

Switching Losses

Square RBSOA

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

300

260

°C

International Standard Packages

Weight

TO-263

TO-220

2.5

3.0

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.5

V_CE= V_CES,V_GE= 0V

15 μA

T_J= 125°C

250 μA

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 12A, V_GE= 15V, Note1

2.30

1.65

DS99141B(08/10)

12 3 4 5 6

中文翻译

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IXGA16N60B2 替代型号

型号	品牌	替代类型	描述	数据表
IXGA20N120B3	IXYS	类似代替	GenX3 1200V IGBT

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