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IXFN80N50P PDF预览

IXFN80N50P

更新时间: 2024-11-09 11:14:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 157K
描述
PolarHV HiPerFET Power MOSFET

IXFN80N50P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:MINIBLOC-4
针数:4Reach Compliance Code:compliant
风险等级:4.25其他特性:UL RECOGNIZED, AVALANCHE RATED
雪崩能效等级(Eas):3000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):66 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFN80N50P 数据手册

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PolarHVTM HiPerFET  
Power MOSFET  
IXFN 80N50P  
VDSS  
ID25  
RDS(on)  
= 500 V  
= 66 A  
65 mΩ  
trr  
200 ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
miniBLOC, SOT-227 B (IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
500  
500  
V
V
S
VGS  
VGSM  
Transient  
Continuous  
40  
30  
V
V
G
ID25  
IDM  
TC = 25° C  
66  
200  
A
A
TC = 25° C, pulse width limited by TJM  
S
IAR  
EAR  
EAS  
TC =25°C  
TC =25°C  
TC =25°C  
80  
80  
3.0  
A
mJ  
J
D
G = Gate  
D = Drain  
S = Source  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 2 Ω  
,
10  
V/ns  
Either source tab S can be used forsource  
current or Kelvin gate return.  
TC =25°C  
700  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
VISOL  
Md  
50/60 Hz; IISOL 1  
mA  
2500  
V~  
l
Fast intrinsic diode  
International standard package  
Mounting torque  
Terminal connection torque (M4)  
1.5/13 Nm/ib.in.  
1.5/13 Nm/ib.in.  
l
l
Unclamped Inductive Switching (UIS)  
rated  
UL recognized.  
Isolated mounting base  
Weight  
30  
g
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
l
Easy to mount  
Space savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 500 µA  
500  
V
V
l
l
VDS = VGS, ID = 8 mA  
3.0  
5.0  
High power density  
VGS  
=
30 VDC, VDS = 0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1
µA  
mA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Note 1  
65 mΩ  
© 2006 IXYS All rights reserved  
DS99477E(01/06)  

IXFN80N50P 替代型号

型号 品牌 替代类型 描述 数据表
VMO60-05F IXYS

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