Datasheet > IXFN80N48

IXFN80N48

更新时间： 2024-11-21 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	137K
描述
HiPerFET Power MOSFETs Single Die MOSFET

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中文翻译

获取价格

数据手册

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IXFN80N48 数据手册

HiPerFET^TM

Power MOSFETs

IXFN 80N48

V_DSS= 480 V

I_D25= 80 A

R_DS(on)= 45 mW

Single Die MOSFET

N-ChannelEnhancementMode

AvalancheRated,Highdv/dt,Lowt_rr

Preliminary data sheet

Symbol

TestConditions

Maximum Ratings

miniBLOC,SOT-227B(IXFN)

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

480

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

T_C= 25°C,

Chip

capability80

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

320

G = Gate

S = Source

D = Drain

E_AR

T_C= 25°C

E_AS

Either Source terminal of miniBLOC can be used

as Main or Kelvin Source

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

P_D

T_C= 25°C

700

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

International standard packages

miniBLOC, with Aluminium nitride

isolation

-55 ... +150

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

Fast intrinsic Rectifier

V_ISOL

M_d

50/60 Hz, RMS

I_ISOL£ 1 mA

t = 1 min

t = 1 s

2500

3000

Mounting torque

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

DC-DC converters

Battery chargers

min. typ. max.

Switched-mode and resonant-mode

power supplies

DC choppers

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

480

V_GH(th)

Temperature and lighting controls

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

100 mA

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t £ 300 ms,

duty cycle d £ 2 %

45 m W

Easy to mount

Space savings

High power density

98724 (05/31/00)

中文翻译

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