Datasheet > IXFN80N50

IXFN80N50

更新时间： 2024-09-14 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		/
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中文翻译

获取价格

数据手册

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IXFN80N50 数据手册

HiPerFET^TM

Power MOSFETs

Single Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

IXFN 80N50

V_DSS

I_D25

R_DS(on)

t_rr

= 500 V

= 80 A

= 55 mΩ

≤ 250 ns

Symbol

TestConditions

Maximum Ratings

miniBLOC,SOT-227B(IXFN)

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

500

V_GS

Continuous

Transient

V_GSM

I_D25

I_DM

I_AR

= 25°C, Chip capability

320

T^C= 25°C, pulse width limited by T_JM

T^C_C= 25°C

E_AR

T_C= 25°C

G = Gate

D = Drain

S = Source

E_AS

Either Source terminal of miniBLOC can be used

as Main or Kelvin Source

dv/dt

I_S≤ I , di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 1^D5^M0°C, R_G= 2 Ω

V/ns

Features

P_D

T_C= 25°C

780

• International standard package

T_J

-55 ... +150

150

-55 ... +150

°C

• miniBLOC, with Aluminium nitride

T_JM

T_stg

isolation

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

V_ISOL

M_d

50/60 Hz, RMS

_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

• Unclamped Inductive Switching (UIS)

rated

Mounting torque

Terminal connection torque

1.5/13 Nm/lb.in.

• Low package inductance

• Fast intrinsic Rectifier

Weight

Applications

• DC-DC converters

• Battery chargers

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

• Switched-mode and resonant-mode

min. typ. max.

power supplies

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

500

2.5

• DC choppers

V_GS(th)

4.5

• Temperature and lighting controls

I_GSS

I_DSS

V_GS= 20 V_DC, V_DS= 0

200 nA

V_DS= V_DSS

V_GS= 0 V

T = 25°C

T_J^J= 125°C

100 µA

Advantages

• Easy to mount

• Space savings

• High power density

R_DS(on)

= 10 V, I_D= 0.5 • I

55 mΩ

Pu^GSlse test, t ≤ 300 µs,^D25

duty cycle d ≤ 2 %

DS98538E(12/03)

12 3 4 5

中文翻译

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