Datasheet > IRHMK58130

IRHMK58130

更新时间： 2024-09-16 19:39:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	401K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
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IRHMK58130 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.68	Base Number Matches：	1

IRHMK58130 数据手册

PD-97415A

IRHMK57160

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE-MOUNT (Low Ohmic TO-254AA Tabless)

TECHNOLOGY

Product Summary

Part Number

IRHMK57160

IRHMK53160

IRHMK55160

IRHMK58160

Radiation Level RDS(on)

I_D

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

1000 kRads(Si)

45A*

0.014

0.015

Low-Ohmic

TO-254 Tabless

Features

Description

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Surface Mount

IRHMK57160 is part of the International Rectifier HiRel

family of products. IR HiRel R5 technology provides high

performance power MOSFETs for space applications.

These devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 80 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-DC

converters and motor controllers. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

 Light Weight

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

45*

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

45*

180

208

1.67

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

493

V_GS

E_AS

I_AR

20.8

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

6.7

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

8.0 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2017-11-14

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与IRHMK58130相关器件

型号	品牌	获取价格	描述	数据表
IRHMK58160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHMK593160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-254AA)
IRHMK597160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-254AA)
IRHMK597160SCS	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO
IRHML597160	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO
IRHMS53064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
IRHMS53160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL
IRHMS53160PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me
IRHMS53Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHMS54064	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met

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