Datasheet > IRHMS58160

IRHMS58160

更新时间： 2024-11-05 04:23:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	175K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL

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IRHMS58160 数据手册

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PD-95889

IRHMS57160

JANSR2N7471T1

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

^{REF: MIL}5^{-PRF-19500/698}

THRU-HOLE (Low-Ohmic TO-254AA)

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHMS57160 100K Rads (Si) 0.013Ω 45A* JANSR2N7471T1

IRHMS53160 300K Rads (Si) 0.013Ω 45A* JANSF2N7471T1

IRHMS54160 600K Rads (Si) 0.013Ω 45A* JANSG2N7471T1

IRHMS58160 1000K Rads (Si) 0.013Ω 45A* JANSH2N7471T1

Low-Ohmic

TO-254AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

45*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

493

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

20.8

6.7

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

11/01/04

12 3 4 5 6 7 8

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与IRHMS58160相关器件

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IRHMS58Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
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IRHMS593160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS593260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS593260SCS	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
IRHMS593Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597064SCS	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597064SCSA	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597064SCV	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25

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