Datasheet > IRHMS67164SCV

IRHMS67164SCV

更新时间： 2024-11-19 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	445K
描述
Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL

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IRHMS67164SCV 数据手册

PD-96958C

IRHMS67164

JANSR2N7582T1

150V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

REF: MIL-PRF-19500/753

TECHNOLOGY

Product Summary

Part Number

IRHMS67164

IRHMS63164

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7582T1

JANSF2N7582T1

100 kRads(Si)

300 kRads(Si)

45A*

0.019

Low-Ohmic

TO-254AA

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

IR HiRel R6 technology provides high performance

power MOSFETs for space applications. These

devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 90 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge

reduces the power losses in switching applications

such as DC-DC converters and motor controllers.

These devices retain all of the well established

advantages of MOSFETs such as voltage control,

fast switching and temperature stability of electrical

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C

Continuous Drain Current

45*

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

180

208

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

1.67

± 20

353

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

20.8

8.2

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

Weight

*Current is limited by package

For footnotes refer to the page 2.

2018-12-18

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHMS67164SCV相关器件

型号	品牌	获取价格	描述	数据表
IRHMS67260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67260SCS	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67260SCV	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67264	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67264A	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67264SCS	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67264SCSA	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS68260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS6S3160	INFINEON	获取价格	Power Field-Effect Transistor,
IRHMS6S3260	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Me

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