Datasheet > IRHMS593260SCS

IRHMS593260SCS

更新时间： 2024-11-07 14:56:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	2285K
描述
Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 300 krad(Si) TID, QIRL

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IRHMS593260SCS 数据手册

PD-94605G

IRHMS597260

JANSR2N7549T1

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

200V, P-CHANNEL

REF: MIL-PRF-19500/713

TECHNOLOGY

Product Summary

Part Number

IRHMS597260

IRHMS593260

Radiation Level

100 kRads(Si)

300 kRads(Si)

RDS(on)

0.103

I_D

QPL Part Number

JANSR2N7549T1

JANSF2N7549T1

-30A

Low-Ohmic

TO-254AA

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for Single Event Effects (SEE) with

useful performance up to an LET of 80 (MeV/(mg/cm²)).

The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such as

DC to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching and temperature

stability of electrical parameters.

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-30

-19

-120

208

1.67

± 20

332

-30

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

20.8

-4.1

-55 to + 150

T_STG

°C

300 ((0.063in./1.6mm from case for 10s)

9.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2019-01-15

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与IRHMS593260SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHMS593Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597064SCS	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597064SCSA	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597064SCV	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597064SCVA	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160A	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
IRHMS597160SCSA	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
IRHMS597260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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