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IRHMS58Z60 PDF预览

IRHMS58Z60

更新时间: 2024-11-20 03:03:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 118K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE

IRHMS58Z60 数据手册

 浏览型号IRHMS58Z60的Datasheet PDF文件第2页浏览型号IRHMS58Z60的Datasheet PDF文件第3页浏览型号IRHMS58Z60的Datasheet PDF文件第4页浏览型号IRHMS58Z60的Datasheet PDF文件第5页浏览型号IRHMS58Z60的Datasheet PDF文件第6页浏览型号IRHMS58Z60的Datasheet PDF文件第7页 
                                                                             
PD-96961A  
IRHMS57Z60  
JANSR2N7478T1  
30V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
REF: MIL5-PRF-19500/697  
THRU-HOLE (Low-Ohmic TO-254AA)  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHMS57Z60 100K Rads (Si) 0.004545A* JANSR2N7478T1  
IRHMS53Z60 300K Rads (Si) 0.004545A* JANSF2N7478T1  
IRHMS54Z60 500K Rads (Si) 0.004545A* JANSG2N7478T1  
Low-Ohmic  
TO-254AA  
IRHMS58Z60 1000K Rads (Si) 0.004545A*  
JANSH2N7478T1  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
of low R  
and low gate charge reduces the  
DS(on)  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Electrically Isolated  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
45*  
45*  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
180  
DM  
@ T = 25°C  
P
D
208  
W
W/°C  
V
C
1.67  
±20  
V
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
1250  
45  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
20.8  
1.08  
-55 to 150  
mJ  
V/ns  
AR  
dv/dt  
T
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. /1.6 mm from case for 10s)  
9.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/25/06  

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