Datasheet > IRHMS593260

IRHMS593260

更新时间： 2024-11-23 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	207K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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IRHMS593260 数据手册

PD - 94605

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

IRHMS597260

200V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHMS597260 100K Rads (Si) 0.103Ω -32A

IRHMS593260 300K Rads (Si) 0.103Ω -32A

Low-Ohmic

TO-254AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electically Isolated

Ceramic Eyelets

Light Weight

High Electrical Conductive Package

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-32

= -12V, T = 100°C Continuous Drain Current

-20

-128

208

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

1.67

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

354

-32

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

-4.1

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10s)

9.3 ( Typical )

For footnotes refer to the last page

www.irf.com

02/13/03

12 3 4 5 6 7 8

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与IRHMS593260相关器件

型号	品牌	获取价格	描述	数据表
IRHMS593260SCS	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
IRHMS593Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597064SCS	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597064SCSA	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597064SCV	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597064SCVA	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS597160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160A	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
IRHMS597160SCSA	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2

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