Datasheet > IRHMS63264

IRHMS63264

更新时间： 2024-11-05 04:22:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	174K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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IRHMS63264 数据手册

PD-96991

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

IRHMS67264

250V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHMS67264 100K Rads (Si) 0.041Ω 45A

IRHMS63264 300K Rads (Si) 0.041Ω 45A

Low-Ohmic

TO-254AA

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²).

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Their combination of very low R

and faster

DS(on)

switching times reduces power loss and increases

power density in today’s high speed switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, ease of paralleling and temperature stability

of electrical parameters.

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

28.5

180

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

251

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

20.8

4.4

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

For footnotes refer to the last page

www.irf.com

06/28/05

12 3 4 5 6 7 8

中文翻译

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与IRHMS63264相关器件

型号	品牌	获取价格	描述	数据表
IRHMS63264SCS	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS64260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67160A	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67160SCS	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67164	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67164SCS	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67164SCSA	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67164SCV	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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