Datasheet > IRHMS67264SCSA

IRHMS67264SCSA

更新时间： 2024-11-21 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1971K
描述
Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead form down

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IRHMS67264SCSA 数据手册

IRHMS67264 (JANSR2N7586T1)

PD-96991D

Radiation Hardened Power MOSFET

Thru-Hole (TO-254AA Low Ohmic)

250V, 45A, N-channel, R6 Technology

Features

Product Summary



Single event effect (SEE) hardened

(up to LET of 85 MeV·cm²/mg)

Low R_DS(on)



Part number: IRHMS67264 (JANSR2N7586T1),

IRHMS63264 (JANSR2N7586T1)

REF: MIL-PRF-19500/753

Radiation level: 100 krad (Si),

300 krad (Si)



Fast switching

Low total gate charge

Simple drive requirements

Hermetically sealed



R_{DS(on), max}: 41m

Electrically isolated

Ceramic eyelets

Light weight

ESD rating: Class 3A per MIL-STD-750, Method 1020

TO-254AA Low Ohmic

Potential Applications



DC-DC converter

Motor drives



Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 85 MeV·cm²/mg. Their combination of low R_DS(on)and fast switching times will allow for better

performance in applications such as DC-DC converters or motor drives. These devices retain all of the well

established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Part number

IRHMS67264

Ordering options

Package

Screening Level

COTS

TID Level

Low-Ohmic TO-254AA

100 krad (Si)

300 krad (Si)

IRHMS67264SCS

JANSR2N7586T1

IRHMS63264

S-Level

JANS

COTS

IRHMS63264SCS

JANSF2N7586T1

S-Level

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2022-03-07

12 3 4 5 6 7...14

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与IRHMS67264SCSA相关器件

型号	品牌	获取价格	描述	数据表
IRHMS68260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS6S3160	INFINEON	获取价格	Power Field-Effect Transistor,
IRHMS6S3260	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Me
IRHMS6S7160	INFINEON	获取价格	Power Field-Effect Transistor,
IRHMS6S7160SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHMS6S7260	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Me
IRHMS6S7260SCS	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS6S7264	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS6S7264SCS	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS9A3064	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A

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