Datasheet > IRHMS67160A

IRHMS67160A

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	529K
描述
Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS, Lead form down

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHMS67160A 数据手册

PD-94723G

IRHMS67160

JANSR2N7580T1

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

REF: MIL-PRF-19500/753

TECHNOLOGY

Product Summary

Part Number

IRHMS67160

IRHMS63160

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7580T1

JANSF2N7580T1

100 kRads(Si)

300 kRads(Si)

45A*

0.011

Low-Ohmic

TO-254AA

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

IRHMS67160 is part of the International Rectifier HiRel

family of products. IR HiRel R6 technology provides high

performance power MOSFETs for space applications.

These devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 90 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-DC

converters and motor controllers. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching and temperature stability of

electrical parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

45*

I_D1@ V_GS= 4.5V, T_C= 25°C

Continuous Drain Current

45*

180

208

1.67

I_D2@ V_GS= 4.5V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

512

V_GS

E_AS

I_AR

20.8

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

6.3

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

Weight

*Current is limited by package

For footnotes refer to the page 2.

2018-07-30

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHMS67160A相关器件

型号	品牌	获取价格	描述	数据表
IRHMS67160SCS	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67164	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67164SCS	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67164SCSA	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67164SCV	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67260SCS	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67260SCV	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS67264	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67264A	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254

与IRHMS67160A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMS67160A

IRHMS67160A 数据手册

与IRHMS67160A相关器件

与IRHMS67160A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMS67160A

IRHMS67160A 数据手册

与IRHMS67160A相关器件

与IRHMS67160A相关文章

您还可以找

您在本页遇到什么问题？