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IRHMS597Z60 PDF预览

IRHMS597Z60

更新时间: 2024-11-24 03:10:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 179K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

IRHMS597Z60 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.32
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):1250 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):45 A最大漏极电流 (ID):45 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-254AAJESD-30 代码:S-XSFM-P3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):208 W
最大脉冲漏极电流 (IDM):180 A认证状态:Not Qualified
参考标准:RH - 100K Rad(Si)子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):180 ns
最大开启时间(吨):210 ns

IRHMS597Z60 数据手册

 浏览型号IRHMS597Z60的Datasheet PDF文件第2页浏览型号IRHMS597Z60的Datasheet PDF文件第3页浏览型号IRHMS597Z60的Datasheet PDF文件第4页浏览型号IRHMS597Z60的Datasheet PDF文件第5页浏览型号IRHMS597Z60的Datasheet PDF文件第6页浏览型号IRHMS597Z60的Datasheet PDF文件第7页 
                                                                         
PD-94666B  
RADIATION HARDENED  
IRHMS597Z60  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-254AA)  
30V, P-CHANNEL  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHMS597Z60 100K Rads (Si) 0.014-45A*  
IRHMS593Z60 300K Rads (Si) 0.014-45A*  
Low-Ohmic  
TO-254AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-45*  
-45*  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-180  
208  
DM  
@ T = 25°C  
P
D
W
W/°C  
V
C
1.67  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
1250  
-45  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
20.8  
mJ  
V/ns  
AR  
dv/dt  
-0.6  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10s)  
9.3 ( Typical )  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
07/05/05  

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