Datasheet > IRHMS597064SCVA

IRHMS597064SCVA

更新时间： 2024-09-17 14:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	370K
描述
Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL,Lead form down

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHMS597064SCVA 数据手册

PD-94713E

IRHMS597064

JANSR2N7524T1

60V, P-CHANNEL

REF: MIL-PRF-19500/733

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low Ohmic - TO-254AA)

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7524T1

JANSF2N7524T1

IRHMS597064 100 kRads(Si)

-45A*

0.018

IRHMS593064

300 kRads(Si)

TO-254AA

Low Ohmic

Description

Features

 Single Event Effect (SEE) Hardened

 Fast Switching

IRHMS597064 is a part of the International Rectifier

HiRel family of products. IR HiRel R5 technology

provides high performance power MOSFETs for space

applications. These devices have been characterized

for both Total Dose and Single Event Effect (SEE) with

useful performance up to LET of 80 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-

DC converters and motor controllers. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paralleling

and temperature stability of electrical parameters.

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

-45*

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-45*

-180

208

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

1.67

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

890

V_GS

E_AS

I_AR

-45

20.8

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-3.8

-55 to + 150

T_STG

°C

300 (0.063 in./1.6 mm from case for 10s)

9.3 (Typical)

Weight

*Current is limited by package

For Footnotes refer to the page 2.

International Rectifier HiRel Products, Inc.

2018-07-10

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHMS597064SCVA相关器件

型号	品牌	获取价格	描述	数据表
IRHMS597160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160A	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
IRHMS597160SCSA	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
IRHMS597260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597Z60SCS	INFINEON	获取价格	Rad hard, -30V, -45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
IRHMS63160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS63164	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS63260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS63264	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

与IRHMS597064SCVA相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

8
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

7
SL74HC10N：高性能三输入与非门解析
2024-09-03

90
AIC1781A 电池充电控制器深度解析
2024-09-03

80

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMS597064SCVA

IRHMS597064SCVA 数据手册

与IRHMS597064SCVA相关器件

与IRHMS597064SCVA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMS597064SCVA

IRHMS597064SCVA 数据手册

与IRHMS597064SCVA相关器件

与IRHMS597064SCVA相关文章

您还可以找

您在本页遇到什么问题？