生命周期: | Active | 包装说明: | FLANGE MOUNT, S-XSFM-P3 |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
雪崩能效等级(Eas): | 890 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.017 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-XSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 180 A | 参考标准: | RH - 300K Rad(Si) |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHMS593160 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) | |
IRHMS593260 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) | |
IRHMS593260SCS | INFINEON |
获取价格 |
Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2 | |
IRHMS593Z60 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) | |
IRHMS597064 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) | |
IRHMS597064SCS | INFINEON |
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Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25 | |
IRHMS597064SCSA | INFINEON |
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Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25 | |
IRHMS597064SCV | INFINEON |
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Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25 | |
IRHMS597064SCVA | INFINEON |
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Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25 | |
IRHMS597160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |