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IRHMS593064 PDF预览

IRHMS593064

更新时间: 2024-11-20 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 182K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

IRHMS593064 技术参数

生命周期:Active包装说明:FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code:compliant风险等级:5.76
雪崩能效等级(Eas):890 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):45 A最大漏源导通电阻:0.017 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):180 A参考标准:RH - 300K Rad(Si)
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHMS593064 数据手册

 浏览型号IRHMS593064的Datasheet PDF文件第2页浏览型号IRHMS593064的Datasheet PDF文件第3页浏览型号IRHMS593064的Datasheet PDF文件第4页浏览型号IRHMS593064的Datasheet PDF文件第5页浏览型号IRHMS593064的Datasheet PDF文件第6页浏览型号IRHMS593064的Datasheet PDF文件第7页 
                                                                         
PD-94713A  
RADIATION HARDENED  
IRHMS597064  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-254AA)  
60V, P-CHANNEL  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHMS597064 100K Rads (Si) 0.017-45A*  
IRHMS593064 300K Rads (Si) 0.017-45A*  
Low-Ohmic  
TO-254AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-45*  
-45*  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
-180  
208  
DM  
@ T = 25°C  
P
D
Max. Power Dissipation  
W
W/°C  
V
C
Linear Derating Factor  
1.67  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
890  
mJ  
A
AS  
I
-45  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
20.8  
mJ  
V/ns  
AR  
dv/dt  
-3.8  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in./1.6 mm from case for 10s)  
9.3 ( Typical )  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
01/05/05  

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