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IRHMS57260SEPBF PDF预览

IRHMS57260SEPBF

更新时间: 2024-11-20 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 185K
描述
Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

IRHMS57260SEPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, S-PSFM-T3Reach Compliance Code:compliant
风险等级:5.7雪崩能效等级(Eas):256 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):45 A
最大漏源导通电阻:0.044 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-254AAJESD-30 代码:S-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):180 A
参考标准:MIL-19500/685表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHMS57260SEPBF 数据手册

 浏览型号IRHMS57260SEPBF的Datasheet PDF文件第2页浏览型号IRHMS57260SEPBF的Datasheet PDF文件第3页浏览型号IRHMS57260SEPBF的Datasheet PDF文件第4页浏览型号IRHMS57260SEPBF的Datasheet PDF文件第5页浏览型号IRHMS57260SEPBF的Datasheet PDF文件第6页浏览型号IRHMS57260SEPBF的Datasheet PDF文件第7页 
                                                                            
PD - 94765  
IRHMS57260SE  
JANSR2N7476T1  
200V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-254AA)  
REF: MIL-PRF-19500/685  
TECHNOLOGY  
5
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHMS57260SE 100K Rads (Si)  
0.04445A JANSR2N7476T1  
Low-Ohmic  
TO-254AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
of low R  
and low gate charge reduces the  
DS(on)  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
D
I
D
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
45  
29  
GS  
GS  
C
A
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
180  
DM  
@ T = 25°C  
P
208  
W
W/°C  
V
D
C
Linear Derating Factor  
1.67  
±20  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
GS  
E
256  
mJ  
A
AS  
I
45  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
20.8  
19.8  
-55 to 150  
mJ  
V/ns  
AR  
dv/dt  
T
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in.(1.6 mm from case for 10s))  
9.3 ( Typical)  
For footnotes refer to the last page  
www.irf.com  
1
09/07/04  

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