Datasheet > IRHMS57260SESCS

IRHMS57260SESCS

更新时间： 2024-11-06 14:56:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	420K
描述
Rad hard, 200V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, COTS

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IRHMS57260SESCS 数据手册

PD-94765A

IRHMS57260SE

JANSR2N7476T1

200V, N-CHANNEL

REF: MIL-PRF-19500/685

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

Product Summary

Part Number

Radiation Level RDS(on)

I_D

QPL Part Number

IRHMS57260SE 100 kRads(Si)

45A

JANSR2N7476T1

0.044

Low-Ohmic

TO-254AA

Description

Features

 Low RDS(on)

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for Single Event Effects (SEE) with

useful performance up to an LET of 80 (MeV/(mg/cm²)).

The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such as

DC to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching and temperature

stability of electrical parameters.

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C

Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

180

208

1.67

± 20

256

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

20.8

19.8

-55 to + 150

T_STG

°C

300 ((0.063in./1.6mm from case for 10s)

9.3 (Typical)

Weight

For Footnotes refer to the page 2.

2019-01-21

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与IRHMS57260SESCS相关器件

型号	品牌	获取价格	描述	数据表
IRHMS57264SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL
IRHMS57264SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 37A I(D), 250V, 0.061ohm, 1-Element, N-Channel, Silicon, Me
IRHMS57Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHMS57Z60SCS	INFINEON	获取价格	Rad hard, 30V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254A
IRHMS58160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL
IRHMS58Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHMS593064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS593160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS593260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS593260SCS	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2

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