型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHMS57064 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) | |
IRHMS57064PBF | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me | |
IRHMS57160 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL | |
IRHMS57160PBF | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me | |
IRHMS57160SCSA | INFINEON |
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Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254 | |
IRHMS57163SE | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) | |
IRHMS57163SEPBF | INFINEON |
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暂无描述 | |
IRHMS57163SESCS | INFINEON |
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Rad hard, 130V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254 | |
IRHMS57260SE | INFINEON |
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RADIATION HARDENED POWER MOSFET | |
IRHMS57260SEPBF | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Me |