Datasheet > IRHMS57163SESCS

IRHMS57163SESCS

更新时间： 2024-11-21 14:56:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	973K
描述
Rad hard, 130V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL

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IRHMS57163SESCS 数据手册

PD-95840B

IRHMS57163SE

JANSR2N7475T1

130V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

REF: MIL-PRF-19500/685

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

IRHMS57163SE

100 kRads(Si)

45A*

JANSR2N7475T1

0.0155

Low-Ohmic

TO-254AA

Description

Features



Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

ESD Rating: Class 3B per MIL-STD-750,

Method 1020

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have been

characterized for Single Event Effects (SEE) with useful

performance up to an LET of 80 (MeV/(mg/cm²)). The

combination of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC to DC

converters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of electrical

parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

45*

180

208

1.67

± 20

432

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

I_AR

E_AR

Avalanche Current 

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

20.8

11.3

dv/dt

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

*Current is limited by package

For Footnotes refer to the page 2.

2020-11-10

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与IRHMS57163SESCS相关器件

型号	品牌	获取价格	描述	数据表
IRHMS57260SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET
IRHMS57260SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
IRHMS57260SESCS	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254
IRHMS57264SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL
IRHMS57264SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 37A I(D), 250V, 0.061ohm, 1-Element, N-Channel, Silicon, Me
IRHMS57Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHMS57Z60SCS	INFINEON	获取价格	Rad hard, 30V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254A
IRHMS58160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL
IRHMS58Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHMS593064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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