Datasheet > IRHML597160

IRHML597160

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1169K
描述
Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO-254AA Tabless SMD, 100 krad(Si) TID, COTS

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IRHML597160 数据手册

PD-97966

IRHML597160

JANSR2N7550D1

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (Low-Ohmic TO-254AA)

Lead formed below package surface plane

100V, P-CHANNEL

REF: MIL-PRF-19500/713

TECHNOLOGY

Product Summary

Part Number

IRHML597160

IRHML593160

Radiation Level

100 kRads(Si)

300 kRads(Si)

RDS(on)

0.05

I_D

-45A JANSR2N7550D1

-45A JANSF2N7550D1

QPL Part Number

0.05

Low-Ohmic

TO-254AA Tabless

Description

Features

 Single Event Effect (SEE) Hardened

 Identical Pre- and Post-Electrical Test Conditions

 Repetitive Avalanche Ratings

 Dynamic dv/dt Ratings

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for Single Event Effects (SEE) with

useful performance up to an LET of 80 (MeV/(mg/cm²)).

The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such as

DC to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching and temperature

stability of electrical parameters.

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Light Weight

 High Electrical Conductive Package

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-45

-28.5

-180

208

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

1.67

± 20

480

V_GS

E_AS

I_AR

-45

E_AR

dv/dt

T_J

20.8

-6.0

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-55 to + 150

T_STG

°C

300 ((0.063in./1.6mm from case for 5s)

3.7 (Typical)

Weight

For Footnotes, refer to the page 2.

2020-05-26

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与IRHML597160相关器件

型号	品牌	获取价格	描述	数据表
IRHMS53064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
IRHMS53160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL
IRHMS53160PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me
IRHMS53Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHMS54064	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRHMS54160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL
IRHMS54160PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me
IRHMS54Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHMS57064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS57064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me

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