是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, S-CSFM-P3 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 雪崩能效等级(Eas): | 824 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 45 A |
最大漏源导通电阻: | 0.0066 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | S-CSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 180 A |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHMS53160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL | |
IRHMS53160PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me | |
IRHMS53Z60 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
IRHMS54064 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
IRHMS54160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL | |
IRHMS54160PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me | |
IRHMS54Z60 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
IRHMS57064 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) | |
IRHMS57064PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me | |
IRHMS57160 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 100V, N-CHANNEL |