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IRHLNA797064B PDF预览

IRHLNA797064B

更新时间： 2024-09-16 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 207K
描述
Power Field-Effect Transistor, 56A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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IRHLNA797064B 数据手册

 浏览型号IRHLNA797064B的Datasheet PDF文件第2页浏览型号IRHLNA797064B的Datasheet PDF文件第3页浏览型号IRHLNA797064B的Datasheet PDF文件第4页浏览型号IRHLNA797064B的Datasheet PDF文件第5页浏览型号IRHLNA797064B的Datasheet PDF文件第6页浏览型号IRHLNA797064B的Datasheet PDF文件第7页 
PD-97174A  
2N7622U2  
IRHLNA797064  
60V, P-CHANNEL  
RADIATION HARDENED  
LOGIC LEVEL POWER MOSFET  
SURFACE MOUNT (SMD-2)  
TECHNOLOGY  
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
IRHLNA797064 100K Rads (Si)  
IRHLNA793064 300K Rads (Si)  
0.015Ω -56A*  
0.015Ω -56A*  
SMD-2  
International Rectifier’s R7TM Logic Level Power  
MOSFETs provide simple solution to interfacing  
CMOS and TTL control circuits to power devices in  
space and other radiation environments. The  
threshold voltage remains within acceptable  
operating limits over the full operating temperature  
and post radiation. This is achieved while maintaining  
single event gate rupture and single event burnout  
immunity.  
Features:  
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
These devices are used in applications such as  
current boost low signal source in PWM, voltage  
comparator and operational amplifiers.  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@V  
@V  
= -4.5V,T = 25°C Continuous Drain Current  
-56*  
-56*  
D
D
GS  
GS  
C
A
I
= -4.5V,T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
-224  
250  
DM  
@ T = 25°C  
P
D
W
W/°C  
V
C
2.0  
V
±10  
GS  
E
1060  
-56  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
-3.7  
T
-55 to 150  
J
T
Storage Temperature Range  
Pckg. Mounting Surface Temp.  
Weight  
°C  
g
STG  
300 (for 5s)  
3.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
06/11/07  
1234567...9

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IRHLNJ77034SCS INFINEON

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IRHLNJ77034SCV INFINEON

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IRHLNJ793034 INFINEON

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