Datasheet > IRHLNA797064SCS

IRHLNA797064SCS

更新时间： 2024-09-17 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	844K
描述
Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL

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IRHLNA797064SCS 数据手册

PD-97174C

2N7622U2

IRHLNA797064

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE-MOUNT (SMD-2)

60V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHLNA797064 100 kRads(Si)

-56A*

0.017

IRHLNA793064

300 kRads(Si)

SMD-2

Description

IR HiRel R7 Logic Level Power MOSFETs provide simple

solution to interfacing CMOS and TTL control circuits to

power devices in space and other radiation environments.

The threshold voltage remains within acceptable operating

limits over the full operating temperature and post

radiation. This is achieved while maintaining single event

gate rupture and single event burnout immunity.

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Surface Mount

 Light Weight

 ESD Rating: Class 3B per MIL-STD-750, Method 1020

The device is ideal when used to interface directly with

most logic gates, linear IC’s, micro-controllers, and other

device types that operate from a 3.3-5V source. It may

also be used to increase the output current of a PWM,

voltage comparator or an operational amplifier where the

logic level drive signal is available.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

Units

I_D1@ V_GS= 4.5V, T_C= 25°C

I_D2@ V_GS= 4.5V, T_C= 100°C

I_DM@T_C= 25°C

-56*

-224

W/°C

P_D@T_C= 25°C

250

Linear Derating Factor

1.67

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

±10

1060

-56

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Package Mounting Surface Temp.

Weight

E_AR

dv/dt

T_J

-3.7

-55 to +150

T_STG

°C

300 (for 5s)

3.3 (Typical)

*Current is limited by package

For footnotes refer to the page 2.

2019-04-23

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHLNA797064SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHLNA797064SCSD	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si
IRHLNA797064SCV	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si
IRHLNA797064SCVD	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R7 in a SMD-2 package - SMD-2, 100 krad(Si
IRHLNJ73034	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
IRHLNJ73034SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLNJ77034	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHLNJ77034SCS	INFINEON	获取价格	Rad hard, 60V, 22A, single, N-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(
IRHLNJ77034SCV	INFINEON	获取价格	Rad hard, 60V, 22A, single, N-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(
IRHLNJ793034	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHLNJ793034SCS	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Met

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