Datasheet > IRHLNJ77034SCV

IRHLNJ77034SCV

更新时间： 2024-09-17 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	199K
描述
Rad hard, 60V, 22A, single, N-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHLNJ77034SCV 数据手册

PD-97301C

2N7606U3

IRHLNJ77034

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-0.5)

60V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number

IRHLNJ77034

IRHLNJ73034

Radiation Level RDS(on)

22A*

100K Rads (Si)

300K Rads (Si)

0.035Ω

SMD-0.5

International Rectifier’s R7^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments.The threshold voltage remains within

acceptable operating limits over the full operating

temperature and post radiation.This is achieved while

maintaining single event gate rupture and single event

burnout immunity.

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

The device is ideal when used to interface directly with most

logic gates, linear IC’s, micro-controllers, and other device

types that operate from a 3.3-5V source. It may also be

used to increase the output current of a PWM, voltage

comparator or an operational amplifier where the logic level

drive signal is available.

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

= 4.5V,T = 25°C

Continuous Drain Current

22*

= 4.5V,T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

@ T = 25°C

W/°C

0.45

±10

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

5.7

V/ns

dv/dt

8.8

-55 to 150

°C

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

STG

300 (for 5s)

1.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

02/09/15

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHLNJ77034SCV相关器件

型号	品牌	获取价格	描述	数据表
IRHLNJ793034	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHLNJ793034SCS	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHLNJ797034	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHLNJ797034A	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHLNJ797034B	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHLNJ797034SCS	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHLNJ797034SCSA	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLNJ797034SCSB	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHLNJ797034SCV	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHLNM73110	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me

与IRHLNJ77034SCV相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

88
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHLNJ77034SCV

IRHLNJ77034SCV 数据手册

与IRHLNJ77034SCV相关器件

与IRHLNJ77034SCV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHLNJ77034SCV

IRHLNJ77034SCV 数据手册

与IRHLNJ77034SCV相关器件

与IRHLNJ77034SCV相关文章

您还可以找

您在本页遇到什么问题？