Datasheet > IRHLNJ797034SCV

IRHLNJ797034SCV

更新时间： 2024-09-17 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	218K
描述
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL

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IRHLNJ797034SCV 数据手册

PD-97302C

2N7624U3

IRHLNJ797034

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-0.5)

60V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number

IRHLNJ797034

IRHLNJ793034

Radiation Level RDS(on)

100K Rads (Si) 0.072Ω

300K Rads (Si) 0.072Ω

22A*

SMD-0.5

International Rectifier’s R7^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments.The threshold voltage remains within

acceptable operating limits over the full operating

temperature and post radiation.This is achieved while

maintaining single event gate rupture and single event

burnout immunity.

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

The device is ideal when used to interface directly with most

logic gates, linear IC’s, micro-controllers, and other device

types that operate from a 3.3-5V source. It may also be

used to increase the output current of a PWM, voltage

comparator or an operational amplifier where the logic level

drive signal is available.

Light Weight

ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

= -4.5V,T = 25°C Continuous Drain Current

-22*

= -4.5V,T = 100°C Continuous Drain Current

-14.9

-88

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.45

±10

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

-22

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

5.7

V/ns

dv/dt

-12.3

-55 to 150

°C

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

03/02/16

12 3 4 5 6 7...9

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与IRHLNJ797034SCV相关器件

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IRHLNM73110	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me
IRHLNM73110SCS	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me
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IRHLNM77110_15	INFINEON	获取价格	Simple Drive Requirements
IRHLNM77110SCS	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM77110SCV	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S3214	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 kra
IRHLNM7S3214SCS	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 kra
IRHLNM7S7110	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S7110SCS	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra

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