Datasheet > IRHLNM7S3214SCS

IRHLNM7S3214SCS

更新时间： 2024-09-17 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	961K
描述
Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 krad(Si) TID, QIRL

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IRHLNM7S3214SCS 数据手册

PD-97852A

IRHLNM7S7214

2N7611U8

250V, N-CHANNEL

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-0.2)

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHLNM7S7214

IRHLNM7S3214

100 kRads(Si)

300 kRads(Si)

3.2A

1.1

Refer to Page 9 for 2 Additional Part Numbers -

IRHLNMC7S7214 and IRHLNMC7S3214 (CERAMIC LID)

SMD-0.2

(METAL LID)

Description

IR HiRel R7 S-line Logic Level Power MOSFETs provide

simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments. The threshold voltage remains within

acceptable operating limits over the full operating

temperature and post radiation. This is achieved while

maintaining single event gate rupture and single event

burnout immunity.

Features

 5V CMOS and TTL Compatible

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

The device is ideal when used to interface directly with

most logic gates, linear IC’s, micro-controllers, and other

device types that operate from a 3.3-5V source. It may

also be used to increase the output current of a PWM,

voltage comparator or an operational amplifier where the

logic level drive signal is available.

 Ceramic Package

 Surface Mount

 Light Weight

 ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

I_D1@ V_GS= 4.5V, T_C= 25°C

I_D2@ V_GS= 4.5V, T_C= 100°C

I_DM@T_C= 25°C

Value

Parameter

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

Units

3.2

2.0

12.8

23.2

0.18

± 10

17.6

3.2

P_D@T_C= 25°C

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

2.32

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-55 to + 150

T_STG

°C

300 (for 5s)

Weight

0.25 (Typical)

For Footnotes, refer to the page 2.

2019-01-24

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...10

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与IRHLNM7S3214SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHLNM7S7110	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S7110SCS	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S7214	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S7214SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLNM83Y20	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
IRHLNM83Y20SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLNM87Y20	INFINEON	获取价格	Simple Drive Requirements
IRHLNM87Y20_15	INFINEON	获取价格	Simple Drive Requirements
IRHLNM87Y20SCS	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2, 100 krad(
IRHLNMC73110	INFINEON	获取价格	Rad hard, 100V, 6.5A, N-channel MOSFET, R7 in SMD-0.2 package - 300 krad(Si) TID, COTS

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