生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
Reach Compliance Code: | compliant | 风险等级: | 5.72 |
其他特性: | LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 79 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.072 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 88 A | 参考标准: | RH - 300K Rad(Si) |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHLNJ797034 | INFINEON |
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RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHLNJ797034A | INFINEON |
获取价格 |
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra | |
IRHLNJ797034B | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Met | |
IRHLNJ797034SCS | INFINEON |
获取价格 |
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra | |
IRHLNJ797034SCSA | INFINEON |
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Power Field-Effect Transistor, | |
IRHLNJ797034SCSB | INFINEON |
获取价格 |
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra | |
IRHLNJ797034SCV | INFINEON |
获取价格 |
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra | |
IRHLNM73110 | INFINEON |
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Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me | |
IRHLNM73110SCS | INFINEON |
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Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me | |
IRHLNM77110 | INFINEON |
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Simple Drive Requirements |