Datasheet > IRHLNM87Y20_15

IRHLNM87Y20_15

更新时间： 2024-09-17 01:07:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	206K
描述
Simple Drive Requirements

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IRHLNM87Y20_15 数据手册

PD-97811

RADIATION HARDENED

IRHLNM87Y20

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-0.2)

20V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number

IRHLNM87Y20

IRHLNM83Y20

Radiation Level RDS(on)

17A*

100K Rads (Si)

300K Rads (Si)

15mΩ

SMD-0.2

(METAL LID)

International Rectifier’s R8^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments.The threshold voltage remains within

acceptable operating limits over the full operating

temperature and post radiation.This is achieved while

maintaining single event gate rupture and single event

burnout immunity.

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

The device is ideal when used to interface directly with most

logic gates, linear IC’s, micro-controllers, and other device

types that operate from a 3.3-5V source. It may also be

used to increase the output current of a PWM, voltage

comparator or an operational amplifier where the logic level

drive signal is available.

Hermetically Sealed

Surface Mount

Light Weight

ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

= 4.5V,T = 25°C

Continuous Drain Current

17*

= 4.5V,T = 100°C Continuous Drain Current

17*

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

@ T = 25°C

W/°C

0.3

±12

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

3.6

V/ns

dv/dt

3.75

-55 to 150

°C

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

STG

300 (for 5s)

0.25 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

07/09/13

12 3 4 5 6 7...9

中文翻译

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与IRHLNM87Y20_15相关器件

型号	品牌	获取价格	描述	数据表
IRHLNM87Y20SCS	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2, 100 krad(
IRHLNMC73110	INFINEON	获取价格	Rad hard, 100V, 6.5A, N-channel MOSFET, R7 in SMD-0.2 package - 300 krad(Si) TID, COTS
IRHLNMC77110	INFINEON	获取价格	N-channel rad hard power MOSFETs
IRHLNMC7S3214	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 kra
IRHLNMC7S3214SCS	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 kra
IRHLNMC7S7214	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLNMC83Y20	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2 Ceramic Li
IRHLNMC83Y20SCS	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2 Ceramic Li
IRHLNMC87Y20	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2 Ceramic Li
IRHLNMC87Y20SCS	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2 Ceramic Li

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