Datasheet > IRHLNM87Y20SCS

IRHLNM87Y20SCS

更新时间： 2024-11-07 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
9页	640K
描述
Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, QIRL

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IRHLNM87Y20SCS 技术参数

生命周期：	Active	包装说明：	CHIP CARRIER, R-XBCC-N3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.7	雪崩能效等级（Eas）：	37 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	17 A
最大漏源导通电阻：	0.015 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-XBCC-N3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最低工作温度：	-55 °C	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	68 A
参考标准：	RH - 100K Rad(Si)	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

IRHLNM87Y20SCS 数据手册

PD-97811A

IRHLNM87Y20

20V, N-CHANNEL

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-0.2)

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

IRHLNM87Y20

IRHLNM83Y20

100 kRads (Si)

300 kRads (Si)

17A*

15m

SMD-0.2

(METAL LID)

Description

Features

5V CMOS and TTL Compatible

 Low RDS(on)

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Light Weight

IRHLNM87Y20 is part of the International Rectifier HiRel

family of products. IR HiRel R8 Logic Level Power

MOSFETs provide simple solution to interfacing CMOS

and TTL control circuits to power devices in space and

other radiation environments. The threshold voltage

remains within acceptable operating limits over the full

operating temperature and post radiation. This is achieved

while maintaining single event gate rupture and single

event burnout immunity.

 Surface Mount

 ESD Rating: Class 1B per MIL-STD-750,

The device is ideal when used to interface directly with

most logic gates, linear IC’s, micro-controllers, and other

device types that operate from a 3.3-5V source. It may

also be used to increase the output current of a PWM,

voltage comparator or an operational amplifier where the

logic level drive signal is available.

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

17*

I_D1@ V_GS= 4.5V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 4.5V, T_C= 100°C

Continuous Drain Current

17*

_DM@ T_C= 25°C

Pulsed Drain Current 

W/°C

P_D@ T_C= 25°C

Maximum Power Dissipation

0.3

Linear Derating Factor

± 12

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

3.6

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

3.75

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

0.25 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

2018-07-30

12 3 4 5 6 7...9

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与IRHLNM87Y20SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHLNMC73110	INFINEON	获取价格	Rad hard, 100V, 6.5A, N-channel MOSFET, R7 in SMD-0.2 package - 300 krad(Si) TID, COTS
IRHLNMC77110	INFINEON	获取价格	N-channel rad hard power MOSFETs
IRHLNMC7S3214	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 kra
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IRHLNMC83Y20	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2 Ceramic Li
IRHLNMC83Y20SCS	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2 Ceramic Li
IRHLNMC87Y20	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2 Ceramic Li
IRHLNMC87Y20SCS	INFINEON	获取价格	Rad hard, 20V, 17A, single, N-channel MOSFET, R8 in a SMD-0.2 package - SMD-0.2 Ceramic Li
IRHLNS87Y50	INFINEON	获取价格	Rad hard, 20V, 75A, single, N-channel MOSFET, R8 in a SupIR-SMD package - SupIR-SMD, 100 k

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