Datasheet > IRHLNM77110SCS

IRHLNM77110SCS

更新时间： 2024-11-07 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	209K
描述
Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, QIRL

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IRHLNM77110SCS 数据手册

PD-97326C

2N7609U8

RADIATION HARDENED

IRHLNM77110

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-0.2)

100V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number

IRHLNM77110

IRHLNM73110

Radiation Level RDS(on)

6.5A

100K Rads (Si)

300K Rads (Si)

0.29Ω

Refer to Page 10 for 2 Additional Part Numbers -

IRHLNMC77110 and IRHLNMC73110 (Ceramic Lid)

SMD-0.2

(METAL LID)

International Rectifier’s R7^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments.The threshold voltage remains within

Features:

5V CMOS and TTL Compatible

Fast Switching

acceptable operating limits over the full operating n Single Event Effect (SEE) Hardened

temperature and post radiation.This is achieved while

maintaining single event gate rupture and single event

burnout immunity.

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

The device is ideal when used to interface directly with most

logic gates, linear IC’s, micro-controllers, and other device

types that operate from a 3.3-5V source. It may also be

used to increase the output current of a PWM, voltage

Light Weight

comparator or an operational amplifier where the logic level n ESD Rating: Class 1A per MIL-STD-750,

drive signal is available.

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

= 4.5V,T = 25°C

Continuous Drain Current

6.5

= 4.5V,T = 100°C Continuous Drain Current

4.1

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

23.2

0.18

±10

W/°C

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

6.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

2.32

4.3

V/ns

dv/dt

-55 to 150

°C

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

0.25 (Typical)

For footnotes refer to the last page

www.irf.com

02/10/16

12 3 4 5 6 7...10

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与IRHLNM77110SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHLNM77110SCV	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S3214	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 kra
IRHLNM7S3214SCS	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 kra
IRHLNM7S7110	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S7110SCS	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S7214	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S7214SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLNM83Y20	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
IRHLNM83Y20SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLNM87Y20	INFINEON	获取价格	Simple Drive Requirements

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