Datasheet > IRHLNJ797034SCSA

IRHLNJ797034SCSA

更新时间： 2024-09-16 20:54:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	391K
描述
Power Field-Effect Transistor,

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技术参数
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IRHLNJ797034SCSA 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

IRHLNJ797034SCSA 数据手册

PD-97302D

2N7624U3

IRHLNJ797034

⁶R^{0V, P-CHANNEL}

7^TECHNOLOGY

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number

Radiation Level RDS(on)

I_D

IRHLNJ797034

100 kRads(Si)

300 kRads(Si)

-22A*

0.072

IRHLNJ793034

-22A*

SMD-0.5

Description

Features

 5V CMOS and TTL Compatible

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Ceramic Package

 Surface Mount

 Light Weight

IR HiRel R7 Logic Level Power MOSFETs provide simple

solution to interfacing CMOS and TTL control circuits to

power devices in space and other radiation environments. The

threshold voltage remains within acceptable operating

limits over the full operating temperature and post radiation. This

is achieved while maintaining single event gate rupture

and single event burnout immunity.

The device is ideal when used to interface directly with

most logic gates, linear IC’s, micro-controllers, and other

device types that operate from a 3.3-5V source. It may

also be used to increase the output current of a PWM,

voltage comparator or an operational amplifier where the

logic level drive signal is available.

 ESD Rating: Class 1C per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D@ V_GS= -4.5V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -4.5V, T_C= 100°C Continuous Drain Current

-22*

-14.9

-88

I_DM

Pulsed Drain Current 

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

0.45

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 10

-22

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

5.7

V/ns

-12.3

-55 to + 150

T_STG

°C

300 (for 5s)

1.0 (Typical)

* Current is limited by package

For Footnotes refer to the page 2.

2016-11-14

12 3 4 5 6 7...9

中文翻译

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与IRHLNJ797034SCSA相关器件

型号	品牌	获取价格	描述	数据表
IRHLNJ797034SCSB	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHLNJ797034SCV	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHLNM73110	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me
IRHLNM73110SCS	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me
IRHLNM77110	INFINEON	获取价格	Simple Drive Requirements
IRHLNM77110_15	INFINEON	获取价格	Simple Drive Requirements
IRHLNM77110SCS	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM77110SCV	INFINEON	获取价格	Rad hard, 100V, 6.5A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 100 kra
IRHLNM7S3214	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 kra
IRHLNM7S3214SCS	INFINEON	获取价格	Rad hard, 250V, 3.2A, single, N-channel MOSFET, R7 in a SMD-0.2 package - SMD-0.2, 300 kra

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