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IRG4PH40UD2

更新时间： 2024-11-20 23:13:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管双极型晶体管双极性晶体管栅超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
10页 247K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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IRG4PH40UD2 数据手册

 浏览型号IRG4PH40UD2的Datasheet PDF文件第2页浏览型号IRG4PH40UD2的Datasheet PDF文件第3页浏览型号IRG4PH40UD2的Datasheet PDF文件第4页浏览型号IRG4PH40UD2的Datasheet PDF文件第5页浏览型号IRG4PH40UD2的Datasheet PDF文件第6页浏览型号IRG4PH40UD2的Datasheet PDF文件第7页 
PD - 94739  
IRG4PH40UD2  
UltraFast CoPack IGBT  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
C
• UltraFast: Optimized for high operating  
frequencies up to 40 kHz in hard switching,  
>200 kHz in resonant mode  
VCES=600V  
V
CE(on) typ. = 1.72V  
• New IGBT design provides tighter  
G
parameter distribution and higher efficiency than  
previous generations  
• IGBT co-packaged with HEXFREDTM ultrafast,  
ultra-soft-recovery anti-parallel diodes for use in  
bridge configurations  
@VGE = 15V, IC = 20A  
E
n-channel  
• Industry standard TO-247AC package  
Benefits  
• Higher switching frequency capability than  
competitive IGBTs  
• Highest efficiency available  
• HEXFRED diodes optimized for performance with  
IGBT's . Minimized recovery characteristics require  
less/no snubbing.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
Units  
V
A
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
40  
IC @ TC = 25°C  
IC @ TC = 100°C Continuous Collector Current  
20  
Pulse Collector Current  
ICM  
160  
Clamped Inductive Load current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
ILM  
160  
10  
IF @ Tc = 100°C  
IFM  
40  
±20  
V
VGE  
PD @ TC = 25°C Maximum Power Dissipation  
160  
W
Maximum Power Dissipation  
Operating Junction and  
65  
PD @ TC = 100°C  
TJ  
-55 to +150  
Storage Temperature Range  
Storage Temperature Range, for 10 sec.  
Mounting Torque, 6-32 or M3 screw  
°C  
TSTG  
300 (0.063 in. (1.6mm) from case)  
10 lbf in (1.1N m)  
Thermal / Mechanical Characteristics  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.77  
2.5  
Units  
°C/W  
RθJC  
Junction-to-Case- IGBT  
Junction-to-Case- Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
–––  
Rθ  
JC  
RθCS  
0.24  
–––  
–––  
40  
Rθ  
JA  
Wt  
–––  
6 (0.21)  
–––  
g (oz.)  
www.irf.com  
1
07/31/03  
1234567...10

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与IRG4PH40UD2相关器件

型号 品牌 获取价格 描述 数据表
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IRG4PH40UD2-EP INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EPBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EPBF_15 INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EPPBF INFINEON

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 		Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, LEAD FRE
IRG4PH40UD2PBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD-E INFINEON

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 		Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH40UD-EPBF INFINEON

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 		Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH40UDPBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE
IRG4PH40U-EPBF INFINEON

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 		Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AC

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