Datasheet > 晶体管 > IGBT> IRG4PH50K

IRG4PH50K

更新时间： 2024-11-20 22:16:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
6页	95K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)

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数据手册

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IRG4PH50K 数据手册

PD - 9.1576

IRG4PH50K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

● High short circuit rating optimized for motor control,

t_sc=10µs, V_CC= 720V, T_J= 125°C, V_GE= 15V

V_CES= 1200V

● Combines low conduction losses with high

switching speed

V_{CE(on) typ.}= 2.77V

● Latest generation design provides tighter

parameter distribution and higher efficiency than

previous generations

@V_GE= 15V, I_C= 24A

n-channel

Benefits

● As a Freewheeling Diode we recommend our HEXFRED^TM

ultrafast, ultrasoft recovery diodes for minimum EMI/Noise

and switching losses in the Diode and IGBT

● Latest generation 4 IGBTs offer highest power density

motor controls possible

● This part replaces the IRGPH50K and IRGPH50M devices

TO-247 AB

Absolute Maximum Ratings

Parameter

Max.

1200

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current ➀

Clamped Inductive Load Current ➁

Short Circuit Withstand Time

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

t_sc

µs

V_GE

E_ARV

±20

190

200

Reverse Voltage Avalanche Energy ➂

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

—

Max.

0.64

—

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

—

6 (0.21)

—

www.irf.com

C-1

12 3 4 5 6

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