IRG4PSH71UD

更新时间： 2024-02-10 02:21:29

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体双极型晶体管栅
页数	文件大小	规格书
10页	326K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH

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中文翻译

获取价格

数据手册
替代型号

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IRG4PSH71UD 数据手册

PD - 91686

IRG4PSH71UD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

UltraFast Copack IGBT

Features

• UltraFast switching speed optimized for operating

frequencies 8 to 40kHz in hard switching, 200kHz

in resonant mode soft switching

V_CES= 1200V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency

V_{CE(on) typ.}= 2.52V

(minimum switching and conduction losses) than

prior generations

@V_GE= 15V, I_C= 50A

• Industry-benchmark Super-247 package with

higher power handling capability compared to

same footprint TO-247

n-channel

• Creepage distance increased to 5.35mm

Benefits

• Generation 4 IGBT's offer highest efficiencies

available

• Maximum power density, twice the power

handling of the TO-247, less space than TO-264

• IGBTs optimized for specific application conditions

• Cost and space saving in designs that require

multiple, paralleled IGBTs

SUPER - 247

• HEXFRED^TMantiparallel Diode minimizes

switching losses and EMI

Absolute Maximum Ratings

Parameter

Max.

1200

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

200

I_LM

Clamped Inductive Load current

Gate-to-Emitter Voltage

200

V_GE

±20

I_F@ Tc = 100°C

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction and

I_FM

200

P_D@ T_C= 25°C

350

°C

P_D@ T_C= 100°C

140

T_J

-55 to +150

T_STG

Storage Temperature Range

Storage Temperature Range, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

0.36

–––

Units

°C/W

R_θJC

R_θCS

R_θJA

Junction-to-Case- IGBT

Junction-to-Case- Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Recommended Clip Force

Weight

–––

0.24

–––

20 (2.0)

–––

N (kgf)

g (oz.)

6 (0.21)

–––

www.irf.com

5/24/04

12 3 4 5 6 7...10

中文翻译

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IRG4PSH71UD 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PSH71UDPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与IRG4PSH71UD相关器件

型号	品牌	获取价格	描述	数据表
IRG4PSH71UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PSH71UPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 99A I(C), 1200V V(BR)CES, N-Channel, SUPER-247, 3 PIN
IRG4RC10	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
IRG4RC10K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
IRG4RC10KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4RC10KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4RC10KDTR	INFINEON	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-252AA
IRG4RC10KDTRL	INFINEON	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-252AA
IRG4RC10KDTRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE,
IRG4RC10KDTRR	INFINEON	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-252AA

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