Datasheet > 晶体管 > IGBT> IRG4RC10KTRL

IRG4RC10KTRL

更新时间： 2024-02-12 15:57:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	136K
描述
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3

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中文翻译

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技术参数
数据手册
替代型号

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IRG4RC10KTRL 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

IRG4RC10KTRL 数据手册

PD 91735A

IRG4RC10K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz , and Short Circuit

Rated to 10µs @ 125°C, V_GE= 15V

V_CES= 600V

• Generation 4 IGBT design provides higher efficiency

than Generation 3

V_{CE(on) typ.}= 2.39V

• Industry standard TO-252AA package

@V_GE= 15V, I_C= 5.0A

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

D-PAK

TO-252AA

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

9.0

I_C@ T_C= 100°C

5.0

I_CM

I_LM

t_sc

µs

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (0.063 in. (1.6mm) from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

3.3

Units

°C/W

g (oz)

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Weight

–––

0.3 (0.01)

–––

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

12/30/00

12 3 4 5 6 7 8

中文翻译

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IRG4RC10KTRL 替代型号

型号	品牌	替代类型	描述	数据表
SGD02N60	INFINEON	功能相似	FAST IGBT IN NPT TECHNOLOGY

与IRG4RC10KTRL相关器件

型号	品牌	获取价格	描述	数据表
IRG4RC10KTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRG4RC10S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
IRG4RC10SD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4RC10SDPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10SDTR	INFINEON	获取价格	暂无描述
IRG4RC10SDTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC,
IRG4RC10SDTRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10SDTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC,
IRG4RC10SDTRRP	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10STR	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 8A I(C) \| TO-252AA

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