是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252AA | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5 | 其他特性: | LOW CONDUCTION LOSS |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 14 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf): | 1080 ns | 门极发射器阈值电压最大值: | 6 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 38 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1780 ns | 标称接通时间 (ton): | 106 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG4RC10SDTRPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE | |
IRG4RC10SDTRR | INFINEON |
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Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC, | |
IRG4RC10SDTRRP | INFINEON |
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Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE | |
IRG4RC10STR | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA | |
IRG4RC10STRL | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA | |
IRG4RC10STRLPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE | |
IRG4RC10STRPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE | |
IRG4RC10STRR | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA | |
IRG4RC10STRRPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE | |
IRG4RC10U | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) |