Datasheet > 晶体管 > IGBT> IRG4RC10KD

IRG4RC10KD

更新时间： 2024-02-06 05:37:52

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管电动机控制双极性晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	191K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

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中文翻译

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技术参数
数据手册

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IRG4RC10KD 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

IRG4RC10KD 数据手册

PD91736A

IRG4RC10KD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated

UltraFast IGBT

Features

• Short Circuit Rated UltraFast: Optimized for

high operating frequencies >5.0 kHz , and Short

Circuit Rated to 10µs @ 125°C, V_GE= 15V

• Generation 4 IGBT design provides tighter

V_CES= 600V

V_{CE(on) typ.}= 2.39V

parameter distribution and higher efficiency than

previous generation

• IGBT co-packaged with HEXFRED^TMultrafast,

@V_GE= 15V, I_C= 5.0A

n-channel

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-252AA package

Benefits

• Latest generation 4 IGBT's offer highest power density

motor controls possible

• HEXFRED^TMdiodes optimized for performance with IGBTs.

Minimized recovery characteristics reduce noise, EMI and

switching losses

D-PAK

• For hints see design tip 97003

TO-252AA

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

_C@ T_C= 25°C

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

9.0

I_C@ T_C= 100°C

5.0

I_CM

I_LM

I_F@ T_C= 100°C

4.0

I_FM

t_sc

± 20

µs

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient (PCB mount)*

Weight

–––

7.0

°C/W

–––

0.3 (0.01)

–––

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

12/30/00

12 3 4 5 6 7...10

中文翻译

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与IRG4RC10KD相关器件

型号	品牌	获取价格	描述	数据表
IRG4RC10KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4RC10KDTR	INFINEON	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-252AA
IRG4RC10KDTRL	INFINEON	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-252AA
IRG4RC10KDTRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE,
IRG4RC10KDTRR	INFINEON	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-252AA
IRG4RC10KDTRRPBF	INFINEON	获取价格	暂无描述
IRG4RC10KPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
IRG4RC10KTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRG4RC10KTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRG4RC10S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)

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